| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 3.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.085Ω/Ohm 3.6A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.2V |
| 耗散功率Pd Power Dissipation | 1.38W |
| Description & Applications | Advanced Power N-CHANNEL ENHANCEMENT MODE POWER MOSFET The Advanced Power MOSFETs from APEC provide the designer with the best combination ofastswitching, low on-resistance and cost-effectiveness. |
| 描述与应用 | 高级电源 N沟道增强模式 功率MOSFET 先进的功率MOSFET提供从APEC 设计师与快速切换的最佳组合， 低导通电阻和成本效益 |