| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.1Ω @-3A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1--3V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | P-Channel Enhancement Mode MOSFET -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package |
| 描述与应用 | P沟道增强型MOSFET -30V/-3A，RDS（ON）=100MΩ（典型值）@ VGS=-10V RDS（ON）=140mΩ（典型值）@ VGS=-4.5V 超级高密度电池设计极 低RDS（ON） 可靠耐用 SOT-23封装 |