| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 11V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5.5V |
| 集电极连续输出电流ICCollector Current(IC) | 32 mA |
| 截止频率fTTranstion Frequency(fT) | 2.4GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 70~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Low Current, High Performance NPN Silicon Bipolar Transistor Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA • Characterized for End-OfLife Battery Use (2.7 V) • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available |
| 描述与应用 | 低电流，高性能 NPN硅双极晶体管 特点 •高性能双极晶体管优化 低电流，低电压操作 •900兆赫绩效： AT-32011：1分贝，14分贝（NF）GA AT-32033：1分贝，12.5分贝（NF）GA •其特点为的最终OfLife电池使用（2.7 V） •SOT-23和SOT-143 SMT塑料封装 •磁带和卷轴包装选项可用 |