| 最大源漏极电压Vds Drain-Source Voltage | 12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.0/0.5-1.0V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Built in Biasing Circuit MOS FET IC VHF RF Amplifier Built in Biasing Circuit; To reduce using parts cost & PC board space. •High gain; (PG = 29 dB typ. at f = 200 MHz) •Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) •Wide supply voltage range; Applicable with 5V to 9V supply voltage. •Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. •Provide mini mold packages; CMPAK-4(SOT-343mod) |
| 描述与应用 | 内置偏置电路MOS FET的IC 甚高频射频放大器 内置偏置电路降低零部件的成本与PC板空间。 •高增益; （PG= 29 dB典型值在f=200兆赫）。 •低噪音特点; （NF=1.2 dB（典型值），在f=200兆赫） •宽电源电压范围; 适用9V电源电压5V。 •耐静电; 内置ESD吸收二极管。承受高达200V在C = 200pF，Rs = 0条件。 •提供小型模具包; CMPAK-4（SOT-343mod） |