| 最大源漏极电压Vds Drain-Source Voltage |
12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
10V |
| 最大漏极电流Id Drain Current |
25MA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
|
| 耗散功率Pd Power Dissipation |
100MW/0.1W |
| Description & Applications |
* Built in Biasing Circuit MOS FET IC . * VHF RF Amplifier. * Built in Biasing Circuit; To reduce using parts cost & PC board space. * Superior cross modulation characteristics. * High gain; (PG = 28 dB typ. at f = 200 MHz). * Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. * Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions. |
| 描述与应用 |
*内置偏置电路MOS FET的IC。 *甚高频RF放大器。 *内置偏置电路降低零部件的成本与PC板空间。 *高级交叉调制特性。 *高增益（PG=28 dB（典型值），在f=200兆赫）。 *宽电源电压范围，适用与5 V至9 V电源电压。 *耐ESD;内置ESD吸收二极管。承受高达200V在C=200 PF，RS=0的条件。 |