| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
−50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−45V |
| 集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) |
100MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
160~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−700mV/-0.7V |
| 耗散功率PcPoWer Dissipation |
300mW/0.3W |
| Description & Applications |
PNP Silicon Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 |
PNP硅晶体管 特点 •这些器件是无铅，无卤素/ 无BFR，并符合RoHS |