| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−45V |
| 集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) |
100MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
160~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−700mV/-0.7V |
| 耗散功率PcPoWer Dissipation |
310mW/0.31W |
| Description & Applications |
PNP general purpose transistor Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available (BC817) |
| 描述与应用 |
PNP通用晶体管 特点 •高电流（最大500毫安） •低电压（最大45 V）。 应用 •通用开关和放大 |