| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−25V |
| 集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) |
80MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
250~600 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−700mV/-0.7V |
| 耗散功率PcPoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP general purpose transistor FEATURES • High current (max. 500 mA) |
| 描述与应用 |
PNP通用晶体管 特点 •高电流（最大500毫安） |