| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V/-80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 65V/-65V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV |
| 耗散功率Pc Power Dissipation | 250mW |
| Description & Applications | Features • NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | 特点 •NPN / PNP硅AF晶体管阵列 •对于AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压 •两个（电流）的内部分离NPN/ PNP晶体管在一个包 •无铅（符合RoHS）包1） •符合AEC Q101 |