| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200~600 mV |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. |
| 描述与应用 | 这些晶体管是专为通用放大器 的应用程序。他们被安置在SOT-323/SC-70 专为低功率表面贴装应用。 |