| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 220~475 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BC847BL3 |
| 描述与应用 | PNP硅晶体管自动对焦 •对于AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压 互补类型：BC847BL3 |