集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −30V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
截止频率fTTranstion Frequency(fT) | 100MHz |
直流电流增益hFEDC Current Gain(hFE) | 125~800 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -250mV/-0.25V |
耗散功率PcPoWer Dissipation | 250mW/0.25W |
Description & Applications | PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. |
描述与应用 | PNP通用晶体管 特点 •低电流(最大100 mA) •低电压(最大65 V)。 应用 •通用开关和放大。 |