| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 125~250 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −650mV/-0.65V |
| 耗散功率PcPoWer Dissipation | 350mW/0.35W |
| Description & Applications | SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856,BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. |
| 描述与应用 | 表面贴装PNP硅晶体管 产品描述： 中央半导体BC856，BC857和BC858系列类型PNP硅 晶体管制造外延平面工艺，环氧树脂模压在一个表面贴装封装，专为一般用途的开关和放大器应用。 |