| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 70 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | Features •NPN Silicon Digital Transistor •Switching circuit, inverter, interface circuit,driver circuit •Built in bias resistor (R1=4.7k , R2=4.7k ) •For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package |
| 描述与应用 | 特点 •NPN硅数字晶体管 •开关电路，逆变器，接口电路，驱动电路 •内置偏置电阻（R1=4.7K，R2=4.7K） •6-PIN封装：两个（电流）的内部隔离晶体管具有良好的匹配在一个封装中 |