| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
100MA/0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
30 |
| 截止频率fT Transtion Frequency(fT) |
130MHZ |
| 耗散功率Pc Power Dissipation |
250MW/0.25W |
| Description & Applications |
* NPN Silicon Digital Transistor * Switching in circuit, inverter, interface circuit, drive circuit * Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) |
| 描述与应用 |
* NPN硅数字晶体管 * 开关电路，逆变器，接口电路，驱动电路 * 内置偏置电阻（R1=10kΩ的，R2=10kΩ的） |