| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| Q1集电极连续输出电流IC Collector Current(IC) |
100MA/0.1A |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
- 50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
- 50V |
| Q2集电极连续输出电流IC Collector Current(IC) |
-100MA/-0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
22KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
22KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
50/50 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
130MHZ/130MHZ |
| 耗散功率Pc Power Dissipation |
250MW/0.25W |
| Description & Applications |
NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=22k, R2=22k)
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| 描述与应用 |
硅NPN / PNP型数字晶体管阵列开关电路,逆变器,接口电路,驱动电路
两个(电)内部孤立的NPN / PNP
晶体管在一个包中
建在偏置电阻(R1 = 22 k,R2 = 22 k)
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