| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 32V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 32V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 380~630 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 550mV/0.55V |
| 耗散功率PcPower Dissipation | 330mW/0.33W |
| Description & Applications | NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) |
| 描述与应用 | NPN硅晶体管自动对焦 对于AF输入级和驱动器应用 高电流增益 低集电极 - 发射极饱和电压 低噪音30 Hz和15千赫之间 互补类型：BCW61，BCX71（PNP） |