| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Features • BVCEO > 20V • High current capability Maximum Continuous Current IC = 1A • Low saturation voltage VCE(sat) < 500mV @ 1A • Complementary PNP type: BCX69 • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free, “Green” Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Application • Power MOSFET gate driving • Low loss power switching |
| 描述与应用 | 中等功率硅NPN20V平面晶体管 特点 •BVCEO> 20V •高电流能力最大连续电流IC= 1A •低饱和电压VCE（sat）<500mV的@1A •互补PNP类型：BCX69 应用 •功率MOSFET栅极驱动 •损耗低功率开关 |