| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 125V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 125V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 25~63 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 900mV/0.9V |
| 耗散功率PcPower Dissipation | 330mW/0.33W |
| Description & Applications | PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX41, BSS64 (NPN) |
| 描述与应用 | PNP硅AF Swiching的晶体管 高击穿电压 低集电极 - 发射极饱和电压 互补类型：BCX41 BSS64（NPN） |