| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers |
| 描述与应用 | NPN中等功率晶体管 特点和优点 高电流 高功率耗散能力 裸露散热器优异的热和电导率（SOT89，SOT1061） 非常小的SMD无铅塑料封装的中等功率能力（SOT1061） 线性稳压器电源管理 低侧开关MOSFET驱动器 电池驱动的设备放大器 |