| 最大源漏极电压VdsDrain-Source Voltage | 10V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 6~10V/6~10V |
| 最大漏极电流IdDrain Current | 30mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.3~1V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | Dual N-channel dual gate MOS-FET FEATURES Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch reduces the number of external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment. |
| 描述与应用 | 双N沟道双栅MOS-FET 特点 两个低噪声增益控制放大器，在单个封装中。与一个完全集成的偏置和部分集成的偏置 内部开关减少了外部元件数量 高级交叉调制性能在AGC 高正向转移导纳 高正向转移导纳输入电容比。 应用 增益控制的低噪声放大器，VHF和UHF应用与5 V电源电压，如数字和模拟电视调谐器和专业的通信设备。 |