| 最大源漏极电压VdsDrain-Source Voltage | 6V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 6~10V/6~10V |
| 最大漏极电流IdDrain Current | 30mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.3~1V |
| 耗散功率PdPower Dissipation | 180mW/0.18W |
| Description & Applications | Dual N-channel dual gate MOS-FET General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. Features and benefits Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias Internal switch to save external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. Applications Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage digital and analog television tuners professional communication equipment. |
| 描述与应用 | 双N沟道双栅MOS-FET 一般说明 BF1205C是两个双栅MOS FET放大器共用源极和栅极2根导线和一个集成开关的组合。集成的开关操作由栅极偏置放大器B。 源和衬底相互连接。内部偏置电路使DC稳定和一个很好的交叉调制性能在AGC。集成二极管之间的门和源保护反对过度输入电压浪涌。该晶体管具有一个微型塑料SOT363封装。 特点和优点 两个低噪声增益控制放大器在单个封装中;一个完全集成的 偏见和部分集成的偏置 内部开关，以节省外部元件 高级交叉调制性能在AGC 高正向转移导纳 高正向转移导纳输入电容比。 应用 增益控制的低噪声放大器，VHF和UHF应用与5 V电源 电压 数字和模拟电视调谐器 专业的通信设备。 |