| 最大源漏极电压Vds Drain-Source Voltage | 8V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | 10mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.3V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V |
| 描述与应用 | 硅N沟道MOSFET四极管 •低噪声，高增益控制 高达1GHz的输入阶段 •工作电压5V |