| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
13V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
3.5V |
| 集电极连续输出电流ICCollector Current(IC) |
50mA |
| 截止频率fTTranstion Frequency(fT) |
46Ghz |
| 直流电流增益hFEDC Current Gain(hFE) |
180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
High Performance NPN Bipolar RF Transistor • High performance low noise amplifier • Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz • For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands • Easy to use standard package with visible leads • Pb-free (RoHS compliant) package |
| 描述与应用 |
高性能NPN双极射频晶体管 •高性能低噪声放大器 •（典型值）的低噪声系数最小。 0.8 GHz的dB@1.8 •广泛的非汽车应用 如WLAN，WiMax技术，UWB，蓝牙，GPS， SDARS，DAB，LNB，UMTS/ LTE和ISM频段 •易于使用的标准包装，可见的线索 •无铅封装（符合RoHS） |