| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 380MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 65~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistors Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion Low output conductance |
| 描述与应用 | NPN硅RF晶体管 适用于共射RF，IF放大器 低集电极 - 基电容由于与盾扩散 低输出电导 |