| 最大源漏极电压VdsDrain-Source Voltage | 25v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -25v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 12~25ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | •N-channel silicon field-effect transistors General description N-channel symmetrical junction field effect transistors in a SOT23 package. |
| 描述与应用 | •N沟道硅场效应晶体管 一般说明 N沟道对称结场效应晶体管采用SOT23封装。 |