| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon N Channel MOSFET Tetrode For VHF applications, especially for input and mixer stages with a wide tuning range. |
| 描述与应用 | 硅N沟道MOSFET四极管 对于甚高频（VHF）的应用程序，特别是对于具有宽调谐范围的输入和混频器的阶段。 |