| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 250mA/0.25A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 25 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 400mW/0.4W |
| Description & Applications | NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. |
| 描述与应用 | 2 GHz的RF功率晶体管NPN 特点 •高功率增益 •高效率 •小尺寸离散功率放大器 •1.9 GHz工作区 •黄金金属确保 出色的可靠性。 应用 •共发射极AB类 手持对讲机的操作 设备在1.9 GHz。 说明 NPN硅平面外延晶体管 封装在塑料中，4 - 针 双射SOT143封装。 |