| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 80mA |
| 截止频率fTTranstion Frequency(fT) | 6GHz~8GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 70~140 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 600mW/0.6W |
| Description & Applications | NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description |
| 描述与应用 | NPN硅RF晶体管* •低噪声，高增益放大器高达2 GHz •对于线性宽带放大器 •英尺= 8 GHz时，F = 1分贝在900 MHz •无铅（符合RoHS）包1） •符合AEC Q101 *短期描述 |