| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 18GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 600mW/0.6W |
| Description & Applications | APPLICATIONS • UHF power transistor • Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. • Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. |
| 描述与应用 | 特点 •高功率增益 •高效率 •1.9 GHz工作区 线性和非线性操作。 应用 •共发射极AB类输出级在手举行 无线电设备在1.9 GHz，如DECT，PHS等 •驱动程序，DCS1800，1900。 说明 NPN双多晶硅双极功率晶体管 埋层低电压中等功率应用 在一个塑料封装，4针的双射SOT343R 包。 |