| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 18V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 4GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 25~70 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities |
| 描述与应用 | NPN平面外延晶体管 安装在一个塑料SOT223 信封，用于宽带 放大器应用。它具有高 输出电压的能力 |