| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 3-3.6mA |
| 截止频率fTTranstion Frequency(fT) | 17GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 16mW |
| Description & Applications | • NPN 17 GHz wideband transistor • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. • Pager front ends • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) • Radar detectors. |
| 描述与应用 | •NPN17 GHz的宽带晶体管 •低电流 •非常高的功率增益 •低噪声系数 •高转换频率 •极低的反馈电容。 •寻呼机前结束 •RF前端 •宽带应用，例如模拟和数字蜂窝 电话，无线电话（PHS，DECT等） •雷达探测器。 |