| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 25-30mA |
| 截止频率fTTranstion Frequency(fT) | 25GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 135mW/0.135W |
| Description & Applications | • NPN 25 GHz wideband transistor • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) • Radar detectors • Pagers • Satellite television tuners (SATV) • High frequency oscillators. |
| 描述与应用 | •NPN25 GHz的宽带晶体管 •非常高的功率增益 •低噪声系数 •高转换频率 •发射器是热的铅 •低反馈电容。 •RF前端 •宽带应用，例如模拟和数字蜂窝 电话，无线电话（PHS，DECT等） •雷达探测器 •寻呼机 •卫星电视调谐器（SATV） •高频率的振荡器。 |