| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 380mW/0.38W |
| Description & Applications | NPN 8 GHz wideband transistors FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. |
| 描述与应用 | NPN8 GHz的宽带晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性。 应用 在GHz范围内的宽带应用，如卫星电视调谐器和 便携式射频通讯设备。 |