| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 12V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 25GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~130 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 160mW/0.16W |
| Description & Applications | NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms= 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET 25 GHz fT - Line • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | NPN硅RF晶体管 •对于高增益低噪声放大器 •对于振荡器高达10 GHz •噪声系数F =1.1dB在1.8 GHz 杰出GMS=21dB在1.8 GHz •过渡频率fT=25 GHz的 •高可靠性的黄金金属 •SIEGET 25 GHz的FT - 线 •无铅（符合RoHS）包1） •符合AEC Q101 |