| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 14V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A |
| 截止频率fTTranstion Frequency(fT) | 15GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN Silicon RF Transistor • For high power amplifiers • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz • Gold metalization for high reliability • Siemens Grounded Emitter Transistor 25 GHz fT - Line |
| 描述与应用 | NPN硅RF晶体管 •对于高功率放大器 •压缩点P-1dB= 26.5 dBm(在1.8 GHz的最大值）。 可用增益GMA=9.5分贝在1.8 GHz •过渡频率fT>17 GHz的 •高可靠性的黄金金属化 •西门子接地发射极晶体管25 GHz的FT - 线 |