| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流ICCollector Current(IC) | 80mA |
| 截止频率fTTranstion Frequency(fT) | 30GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms= 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line |
| 描述与应用 | NPN硅RF晶体管 •对于最高增益低噪声放大器在1.8 GHz •杰出GMS= 21分贝 噪声系数F =0.9分贝 •高可靠性的黄金金属 •45 - SIEGET线 |