| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 2.3V |
| 集电极连续输出电流ICCollector Current(IC) | 80mA |
| 截止频率fTTranstion Frequency(fT) | 65GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 110~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 185mW/0.185W |
| Description & Applications | NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • High maximum stable gain Gms= 21.5 dB at 1.8 GHz Gms= 11 dB at 6 GHz • Gold metallization for extra high reliability |
| 描述与应用 | NPN硅锗射频晶体管 •高增益低噪声RF晶体管 •突出表现为广泛的无线应用 •非常适于CDMA和WLAN应用 •杰出的噪声指数为1.8GHz（F=0.7dB时） 杰出的噪声指数为6 GHz（F =1.3dB时） •高的最大稳定增益 GMS=21.5dB（1.8 GHz时） GMS=11dB（6 GHz时） •黄金金属额外的高可靠性 |