| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 4mA |
| 截止频率fTTranstion Frequency(fT) | 7GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 30mW |
| Description & Applications | NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz |
| 描述与应用 | NPN硅RF晶体管 低噪声，高增益宽带放大器集电极电流从0.2mA到2.5mA fT = 7 GHz F = 2.1 dB at 900 MHz |