| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 18mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN 9 GHz wideband transistor BFR505T FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. |
| 描述与应用 | NPN9 GHz的宽带晶体管BFR505T的 特点 •低电流消耗 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性 •SOT416（SC-75）封装。 应用 低功耗放大器，振荡器和 特别是在便携式射频混频器 通信设备（手机，无绳电话和寻呼机）高达2 GHz。 |