| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | NPN 5 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and scillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PNP complement is BFT92. |
| 描述与应用 | 5 GHz的宽带晶体管NPN 说明 主要是在射频宽带放大器scillators的用于NPN晶体管在一个塑料SOT23信封。晶体管具有低互调失真和高功率增益，由于其非常高的转换频率，它还具有优异的宽带性能和低噪声高频率。 PNP补充BFT92。 |