| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | NPN 5 GHz wideband transistor FEATURES Very low intermodulation distortion High power gain Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency. APPLICATIONS RF wideband amplifiers and oscillators. |
| 描述与应用 | 5 GHz的宽带晶体管NPN 特点 非常低的互调失真 高功率增益 优异的宽带性能和低噪声由于其非常高的跳变频率的高频率。 应用 射频宽带放大器和振荡器。 |