| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 3.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 20~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon Planar RF Transistor Applications Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications. Features Low noise figure High power gain Small collector capacitance |
| 描述与应用 | NPN硅平面RF晶体管 应用 宽带，低噪声，小信号放大器 的UHF frquencies，高速逻辑应用和振荡器的应用。 特点 低噪声系数 高功率增益 小集电极电容 |