集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流ICCollector Current(IC) | 25mA |
截止频率fTTranstion Frequency(fT) | 1.3GHz |
直流电流增益hFEDC Current Gain(hFE) | 25~200 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率PcPower Dissipation | 330mW/0.33W |
Description & Applications | SOT23 NPN SILICON PLANAR RF TRANSISTORS |
描述与应用 | SOT23 NPN硅平面RF晶体管 |