| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 450MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 85 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN medium frequency transistor FEATURES • IC(max) = 25 mA • VCEO(max) = 20 V • Very low feedback capacitance (typ. 350 fF). APPLICATIONS • IF and VHF thick and thin-film circuit applications. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. |
| 描述与应用 | NPN中频晶体管 特点 •IC（最大值）= 25 mA的 •VCEO（最大值）= 20 V •非常低的反馈电容. 应用 •中频和VHF厚和薄膜电路的应用。 说明 NPN中频晶体管在SOT23塑料包装。 |