| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
10V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
8V |
| 集电极连续输出电流ICCollector Current(IC) |
10mA |
| 截止频率fTTranstion Frequency(fT) |
7.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) |
30~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
80mW |
| Description & Applications |
NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package |
| 描述与应用 |
NPN硅RF晶体管 •低噪声，低功耗放大器在移动通信系统（寻呼机，无绳电话）集电极电流0.2毫安到8mA •两个（电流）的内部孤立在一个晶体管包装 |