| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 470MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 25 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 7.5V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | UHF power transistor FEATURES SMD encapsulation Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. |
| 描述与应用 | UHF功率晶体管 特点 SMD封装 镀金确保 出色的可靠性。 说明 NPN硅平面外延晶体管封装在一个SOT223表面安装的信封和设计主要用于手持式无线电设备在470 MHz的通信频段。 |