| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 250mA/0.25A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-3.0V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1 & 2) |
| 描述与应用 | N-沟道增强型MOSFET 低导通电阻 •低栅极阈值电压 •低输入电容 •开关速度快 •低输入/输出漏 •铅，卤素和无锑，符合RoHS标准的“绿色” 设备（附注1及2） |