| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 350V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 70MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 800mW/0.8W |
| Description & Applications | NPN Silicon Epitaxial Transistor High Voltage: V(BR)CEO of 250 and 350 Volts. The SOT-223 package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joins. the formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel PNP Complement is BSP16T1 |
| 描述与应用 | NPN硅外延晶体管 高电压V（BR）CEO的250和350伏特。 SOT-223封装，可以使用波或回流焊接。 SOT-223包装保证水平安装，从而提高热传导，并允许目视检查焊接连接。所形成的线索在焊接热应力吸收，消除模具损坏的可能性 可在12毫米编带和卷轴 PNP补BSP16T1 |