| 最大源漏极电压Vds Drain-Source Voltage |
10V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
2V |
| 最大漏极电流Id Drain Current |
50mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.045Ω/Ohm 100mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
0.1-2.0V |
| 耗散功率Pd Power Dissipation |
230mW/0.23W |
| Description & Applications |
MOSFET N-channel enhancement switching transistor Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. |
| 描述与应用 |
MOSFET N沟道增强开关晶体管 对称绝缘栅硅 MOS场效应晶体管的 N沟道增强模式类型。 该晶体管是密封在一个SOT143 信封和功能低开 电阻和低电容。该 晶体管保护，以防止 过大的输入电压 背到二极管集成 栅极和衬底之间 |